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FP2189
1-Watt HFET
The Communications Edge TM Product Information
Product Features
50 - 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package * MTTF >100 Years * * * * * *
Product Description
The FP2189 is a high performance 1-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm output IP3 performance and an output power of +30 dBm at 1-dB compression, while providing 18.5 dB gain at 900 MHz. The device conforms to WJ Communications' long history of producing high reliability and quality components. The FP2189 has an associated MTTF of greater than 100 years at a mounting temperature of 85 C and is available in both the standard SOT-89 package and the environmentally-friendly lead-free/green/RoHScompliant and green SOT-89 package. All devices are 100% RF & DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required.
Functional Diagram
GND 4
1 RF IN
2 GND
3 RF OUT
Applications
* * * * * * Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless
Function Input / Gate Output / Drain Ground
Pin No. 1 3 2, 4
Specifications
DC Parameter
Saturated Drain Current, Idss (1) Transconductance, Gm Pinch Off Voltage, Vp (2)
Typical Performance (5)
Units Min
mA mS V 445
Typ
615 280 -2.1
Max
705
Parameter
Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 (4) Noise Figure IS-95 Channel Power
@ -45 dBc ACPR
Units
MHz dB dB dB dBm dBm dB dBm
Typical
915 1960 2140 2450 18.7 15.6 14.4 13.0 21 14.6 23 26 8.3 12 11.5 9.6 +30.2 +30.4 +30.6 +31.2 +42.8 +43.5 +43.9 +45.3 4.5 3.4 4.5 +24.5 +23.8 +22.2
RF Parameter (3)
Operational Bandwidth Test Frequency Small Signal Gain SS Gain (50 , unmatched) Maximum Stable Gain Output P1dB Output IP3 (4) Noise Figure Drain Bias
Units Min
MHz MHz dB dB dB dBm dBm dB 50
Typ
800 18.5
Max
4000
15 24 +30 +43 4.5 +8V @ 250 mA
21
W-CDMA Ch. Power
@ -45 dBc ACLR
Drain Voltage Drain Current
V mA
+8 250
5. Typical parameters represent performance in a tuned application circuit.
1. Idss is measured with Vgs = 0 V, Vds = 3 V. 2. Pinch-off voltage is measured when Ids = 2.4 mA. 3. Test conditions unless otherwise noted: T = 25 C, VDS = 8 V, IDQ = 250 mA in an application circuit with ZL = ZLOPT, ZS = ZSOPT (optimized for output power). 4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Operating Case Temperature Storage Temperature DC Power RF Input Power (continuous) Drain to Gate Voltage, Vdg Junction Temperature
Rating
-40 to +85 C -55 to +125 C 4.0 W 6 dB above Input P1dB +16 V +220 C
Ordering Information
Part No.
FP2189-G FP2189-PCB900S FP2189-PCB1900S FP2189-PCB2140S
Description
1 -Watt HFET
(lead-free/green/RoHS-compliant SOT-89 package)
870 - 960 MHz Application Circuit 1930 - 1990 MHz Application Circuit 2110 - 2170 MHz Application Circuit
Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 1 of 12 October 2006
FP2189
1-Watt HFET
The Communications Edge TM Product Information
Typical Device Data
S-Parameters (VDS = +8 V, IDS = 250 mA, T = 25 C, calibrated to device leads)
S11
1.0
6 0. 6 0.
S22
1.0
30
0.8
0.8
S21 and Maximum Stable Gain
S21 MSG
S21, MSG (dB)
0. 2
0. 4
Swp Max 6GHz
2. 0
Swp Max 6GHz
2. 0
5 4 3
0 3.
0 4.
10.0
10.0
2 - 0.
-4 .0 - 5. 0
2 -0 .
2
.4 -0
.4 -0
.0 -2
-0 .6
-0.8
-1.0
-0.8
0
1
2
Note: Measurements were made on the packaged device in a test fixture with 50 ohm input and output lines. The S-parameters shown are the de-embedded data down to the device leads and represents typical performance of the device. Freq (MHz) 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 2750 3000 3250 3500 3750 4000 S11 (mag) S11 (ang) S21 (mag) S21 (ang) S12 (mag) S12 (ang) S22 (mag) 0.995 -9.21 15.562 173.61 0.004 82.89 0.261 0.963 -43.33 14.312 151.51 0.017 65.62 0.263 0.906 -78.54 11.961 128.91 0.029 49.26 0.276 0.876 -104.31 9.735 111.97 0.036 34.34 0.288 0.851 -123.00 8.046 98.87 0.040 24.98 0.300 0.836 -138.30 6.765 86.96 0.042 17.12 0.315 0.834 -149.84 5.864 77.58 0.043 12.50 0.330 0.825 -159.46 5.090 68.80 0.043 8.49 0.346 0.827 -168.49 4.556 60.62 0.044 4.05 0.368 0.827 -176.39 4.049 52.41 0.043 0.16 0.378 0.826 177.53 3.660 45.61 0.043 -1.33 0.394 0.830 171.26 3.336 38.11 0.043 -3.95 0.416 0.829 165.08 3.054 30.79 0.043 -6.46 0.427 0.828 159.79 2.779 24.59 0.043 -6.43 0.445 0.836 154.28 2.596 18.29 0.043 -8.81 0.465 0.838 149.19 2.422 11.82 0.044 -8.46 0.478 0.839 144.09 2.276 5.12 0.044 -8.40 0.498 Device S-parameters are available for download off of the website at: http://www.wj.com S22 (ang) -10.68 -46.04 -81.01 -103.33 -119.07 -130.86 -139.51 -147.68 -153.90 -160.68 -166.28 -171.43 -177.48 177.09 172.17 166.87 160.44
Load-Pull Data at 1.96 GHz
(Vds = 8 V, Ids = 250 mA, 25 C, ZS = 50 )
1.96 GHz r 9.0 Ohm x 11.0 Ohm
0. 4
Output IP3
1.0
2. 0
6 0.
P1dB
Swp Max 6GHz
1.0
0 3.
1.96 GHz r 22 Ohm x 2 Ohm
0. 4
0.
6
Swp Max 6GHz
2. 0
0.8
0.8
0 3.
0 4.
0. 2
0 4.
50 48
10.0
5 .0
5 .0
10.0
10.0
10.0
0.4
0.6
0.8
1.0
2.0
0.2
0.4
0.6
0.8
1.0
4.0 5.0
2.0
3.0
0
46 45
-10. 0
30
-10.0
29
- 5. 0
2 -0 .
2 -0 .
28
5.0
0.2
3.0
4.0
47
0
.4 -0
.4 -0
.0 -2
-0 .6
-0 .6
-0.8
.0 -2
Swp Min 1e-009GHz
Swp Min 1e-009GHz
-0.8
Maximum IP3 = +51 dBm at ZL = 9 + j11
-1.0
Maximum P1dB = +30.9 dBm at ZL = 22 + j2
Specifications and information are subject to change without notice. Page 2 of 12 October 2006
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
-1.0
-1.0
3 Frequency (GHz)
4
5
6
Swp Min 0.01GHz
-0 .6
.0 -2
0
1
Swp Min 0.01GHz
-4 .0 -5. 0
1
-1 0.0
-3 .0
-4 .0
-3 .0
-10.
0
10
2
-3 .0
3
10.0
0.2
0.6
0.8
1.0
2.0
5.0
0.2
0.6
0.8
1.0
2.0
3.0
4.0
0.4
3.0
4.0
0.4
5.0
0
0
0. 2
20
5 .0
0. 4
6
0 3.
6 5 4
0 4.
5.0
10 .0
-4 .0 - 5. 0
-3 .0
0. 2
FP2189
1-Watt HFET
The Communications Edge TM Product Information
Application Circuit: 870 - 960 MHz (FP2189-PCB900S)
The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 250 mA, 25 C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
MHz dB dB dB dBm dBm dB dBm
870 18.9 -24 -7.6 +30.0
915 18.7 -21 -8.3 +30.2 +42.8
960 18.4 -12 -9.6 +30.0
Noise Figure IS-95 Channel Power
@ -45 dBc ACPR
4.2
4.5 +24.5
4.5
CAP CAP CAP ID= C10 ID= C3 ID= C4 C=100 pF C= 1000 pF C=DNP pF -Vgg
Vds =8V @ 250 mA
CAP ID=C11 C=1e 5 p F CAP ID=C12 C=DNP pF
RES ID= R1 R=100 Ohm
CAP ID=C 8 C=1000 pF CAP ID=C 7 C=100 pF CAP ID=C 6 C=DNP pF IN D ID=L3 L=82 nH
CAP ID=C13 C=DNP p F CAP ID=C 2 C=DNP p F SUBCKT ID=Q1 NET="FP2189"
2
PORT P=1 Z=50 Ohm
CAP ID= C1 C= 100 pF
IND ID=L4 L=5.6 nH
IN D ID=L1 L=18 nH
IND ID= L2 L= 5.6 nH
CAP POR T ID=C9 P=2 C=10 0 p F Z= 50 Ohm
1
CAP ID= C15 C=4.7 pF
RES ID=R 2 R=10 Ohm
CAP ID=C5 C=2 .4 p F
CAP ID= C14 C=DNP pF
Bill of Materials
Ref. Desig. C1, C3, C7, C9, C13 C4, C8 C5 C11 L1 L2, L4 L3 R1 R2 Q1 C2, C6, C10, C12, C14 Value 100 pF 1000 pF 2.4 pF 0.1 F 18 nH 5.6 nH 82 nH 100 10 FP2189 Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Multilayer chip inductor Multilayer chip inductor Chip resistor Chip resistor WJ 1W HFET Do Not Place Size 0603 0603 0603 1206 0603 0603 0603 0603 0603 SOT-89
14 mil GETEKTM ML200DSS (r = 4.2) The main microstrip line has a line impedance of 50
.
Specifications and information are subject to change without notice.
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 3 of 12
October 2006
FP2189
1-Watt HFET
S11 vs. Frequency S21 vs. Frequency
The Communications Edge TM Product Information
FP2189-PCB900S Application Circuit Performance Plots
S22 vs. Frequency
0 -5 S11 (dB) -10 -15 -20 -25 -30 860 880 900 920 940 960 Frequency (MHz)
P1dB vs. Frequency -40c +25c +85c
20 19 S21 (dB) 18 17 16
-40c +25c +85c
0 -5 S22 (dB) -10 -15 -20 -25
-40c +25c +85c
15 860 880 900 920 940 960 Frequency (MHz)
Noise Figure vs. Frequency
-30 860 880 900 920 940 960 Frequency (MHz)
ACPR vs. Channel Power
IS-95, 9 Ch. Forward, 885 kHz offset, 30 kHz Meas BW
34 32 P1dB (dBm) 30 28 26
-40c +25c +85c
6 5 NF (dB) 4 3 2 1
-40c +25c +85c
-30 ACPR (dBc) -40 -50 -60
freq = 915 MHz
-40 C
+25 C
+85 C
24 860 880 900 920 940 960 Frequency (MHz)
OIP3 vs. Temperature
0 860 880 900 920 940 960 Frequency (MHz)
IMD products vs. Output Power -20 IMD products (dBm) -40 -60 -80
fundamental frequency = 915 MHz, 916 MHz; Temp = +25C
-70 20 21 22 23 24 25 26 Output Channel Power (dBm)
OIP3 vs. Output Power 50 45 40 35 30 0 4 8 12 16 Output Power (dBm) 20 24 0 4 8 12 16 Output Power (dBm) 20 24
fundamental frequency = 915 MHz, 916 MHz; Temp = +25C
46 44 OIP3 (dBm) 42 40 38 36 -40 -15 10 35 60 85 Temperature ( C)
Output Power / Gain vs. Input Power
20 18
frequency = 915 MHz, Temp = -40C
IMD_Low IMD_High
freq = 915, 916 MHz +15 dBm / tone
-100
Output Power / Gain vs. Input Power 32 Output Power (dBm) 28 24 20
20 18
frequency = 915 MHz, Temp = +85C
OIP3 (dBm)
Output Power / Gain vs. Input Power 32 Output Power (dBm) 28
20 18
frequency = 915 MHz, Temp = +25C
32 28 24 20 Output Power (dBm)
Gain (dB)
Gain (dB)
16 14 12 10 -4 0 4 8 12 Input Power (dBm ) 16 20
16 14 12 10 -4 0 4 8 12 Input Power (dBm ) 16 20
24 20 Output Power 16 12
Output Power
16 12
Gain (dB)
Gain
Gain
Gain
16 14 12 10 -4 0 4 8 12 Input Power (dBm ) 16 20
Output Power
16 12
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 4 of 12 October 2006
FP2189
1-Watt HFET
The Communications Edge TM Product Information
Application Circuit: 1930 - 1990 MHz (FP2189-PCB1900S)
The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 250 mA, 25 C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
MHz dB dB dB dBm dBm dB dBm
1930 15.6 -15.4 -12 +30.2
1960 15.6 -14.6 -12 +30.4 +43.5
1990 15.4 -13.2 -12 +30.5
Noise Figure IS-95 Channel Power
@ -45 dBc ACPR
3.4
3.4 +23.8
3.6
CAP CAP CAP ID=C3 ID=C10 ID=C4 C=33 pF C=1000 pF C=DNP pF -Vgg
Vds=8V @ 250 mA RES ID=R1 R=20 Ohm CAP ID=C8 C=10000 pF CAP ID=C6 C=1000 pF CAP ID=C7 C=33 pF IND ID=L2 L=22 nH
CAP ID=C11 C=DNP pF CAP ID=C2 C=2.4 pF IND ID=L1 L=10 nH
SUBCKT ID=Q1 NET="FP2189" RES ID=R2 R=5.1 Ohm
1 2
PORT P=1 Z=50 Ohm
CAP ID=C1 C=33 pF
CAP ID=C9 C=33 pF
PORT P=2 Z=50 Ohm
CAP ID=C13 C=2.4 pF
CAP ID=C12 C=DNP pF
CAP ID=C5 C=DNP pF
CAP ID=C14 C=1.5 pF
Bill of Materials
Ref. Desig. C1, C3, C7, C9 C2, C13 C4, C6 C8 C14 L1 L2 R1 R2 Q1 C5, C10, C11, C12 Value 100 pF 2.4 pF 1000 pF 0.1 F 1.5 pF 10 nH 22 nH 20 5.1 FP2189 Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Multilayer chip inductor Chip resistor Chip resistor WJ 1W HFET Do Not Place Size 0603 0603 0603 1206 0603 0603 0603 0603 0603 SOT-89
14 mil GETEKTM ML200DSS (r = 4.2) The main microstrip line has a line impedance of 50
.
Specifications and information are subject to change without notice.
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
Page 5 of 12
October 2006
FP2189
1-Watt HFET
S11 vs. Frequency S21 vs. Frequency
The Communications Edge TM Product Information
FP2189-PCB1900S Application Circuit Performance Plots
S22 vs. Frequency
0 -5 S11 (dB) S21 (dB) -10 -15 -20 -25 -30 1930
-40C +25C +85C
17 16 15 14 13
-40C +25C +85C
0 -5 S22 (dB) -10 -15 -20 -25 -30 1950 1970 1990 1930 Frequency (MHz)
Noise Figure vs. Frequency -40C +25C +85C
12 1930
1950
1970
1990
1950
1970
1990
Frequency (MHz)
P1dB vs. Frequency
Frequency (MHz)
ACPR vs. Channel Power
IS-95, 9 Ch. Forward, 885 kHz offset, 30 kHz Meas BW
34 32 P1dB (dBm) 30 28 26
-40c +25c +85c
6 5 NF (dB) 4 3 2 1
-40c +25c +85c
-30 ACPR (dBc) -40 -50 -60
freq = 1960 MHz
-40 C
+25 C
+85 C
24 1930 1950 1970 1990 Frequency (MHz)
OIP3 vs. Temperature
0 1930 1950 1970 1990 Frequency (MHz)
IMD products vs. Output Power -20 IMD products (dBm) -40 -60 IMD_Low -80 IMD_High
fundamental frequency = 1960, 1961 MHz; Temp = +25C
-70 18 19 20 21 22 23 24 25 26
Output Channel Power (dBm)
OIP3 vs. Output Power 50 45 40 35 30
fundamental frequency = 1960, 1961 MHz; Temp = +25C
46 44 OIP3 (dBm) 42 40 38 36 -40 -15 10 35 60 85 Temperature ( C)
Output Power / Gain vs. Input Power 18 16 Gain (dB) Gain 24 20 Output Power -4 0 4 8 12 Input Power (dBm) 16 20 16 12 14 12 10 8
frequency = 1960 MHz, Temp = -40C
freq = 1960, 1961 MHz +15 dBm / tone
-100 0 4 8 12 16 Output Power (dBm) 20 24
OIP3 (dBm)
0
4
8 12 16 Output Power (dBm)
20
24
Output Power / Gain vs. Input Power 32 Output Power (dBm) 28
18 16
frequency = 1960 MHz, Temp = +25C
Output Power / Gain vs. Input Power 32 Output Power (dBm) 28
18 16
frequency = 1960 MHz, Temp = +85C
32 28 Output Power (dBm)
Gain (dB)
14 12 10 8 -4
Gain
24 20 Output Power 16 12
Gain (dB)
14 12 10
Gain
24 20 16 Output Power 12
8 -4 0 4 8 12 Input Power (dBm ) 16 20
0
4 8 12 Input Power (dBm )
16
20
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 6 of 12 October 2006
FP2189
1-Watt HFET
The Communications Edge TM Product Information
Application Circuit: 2110 - 2170 MHz (FP2189-PCB2140S)
The application circuit is matched for output power. Typical RF Performance Drain Bias = +8 V, Ids = 250 mA, 25 C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
MHz dB dB dB dBm dBm dB dBm
2110 14.4 -23 -9.7 +30.5
2140 14.4 -23 -11.5 +30.6 +43.9
2170 14.4 -22 -12 +30.2
Noise Figure W-CDMA Channel Power
@ -45 dBc ACPR
4.2
4.5 +22.2
4.3
CAP ID= C3 C=33 pF
Vds=8V @ 250 mA CAP ID= C8 C=10000 pF
-Vgg RES ID=R1 R=10 Ohm
CAP ID= C2 C=DNP pF
CAP ID= C6 C=22 pF CAP ID= C7 C=1000 pF IND ID= L2 L=18 nH
PORT P= 1 Z= 50 Ohm
CAP ID= C1 C=1.8 pF
IND ID= L1 L=5.6 nH
SUBCKT ID= Q1 NET="FP2189" RES ID=R2 R=6.2 Ohm
1 2
CAP ID= C9 C=22 pF
PORT P= 2 Z= 50 Ohm
CAP ID=C4 C=DNP pF
CAP ID=C11 C=1.8 pF
CAP ID= C5 C=DNP pF
CAP ID=C10 C=1 pF
Bill of Materials
Ref. Desig. C1, C11 C3 C6, C9 C7 C8 C10 L1 L2 R1 R2 Q1 C2, C4, C5 Value 1.8 pF 33 pF 22 pF 1000 pF 0.1 F 1.0 pF 5.6 nH 18 nH 10 6.2 FP2189 Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Multilayer chip inductor Chip resistor Chip resistor WJ 1W HFET Do Not Place Size 0603 0805 0603 0603 1206 0603 0603 0603 0603 0603 SOT-89
14 mil GETEKTM ML200DSS (r = 4.2) The main microstrip line has a line impedance of 50
.
Specifications and information are subject to change without notice. Page 7 of 12 October 2006
WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com
FP2189
1-Watt HFET
S11 vs. Frequency S21 vs. Frequency
The Communications Edge TM Product Information
FP2189-PCB2140S Application Circuit Performance Plots
S22 vs. Frequency
0 -5 S11 (dB) -10 -15 -20 -25 -30 2110 2130 2150 2170 Frequency (MHz)
P1dB vs. Frequency -40c +25c +85c
16 15 S21 (dB) 14 13 12
-40c +25c +85c
0 -5 S22 (dB) -10 -15 -20 -25 -30 2130 2150 2170 2110 Frequency (MHz)
Noise Figure vs. Frequency -40c +25c +85c
11 2110
2130
2150
2170
Frequency (MHz)
ACPR vs. Channel Power
3GPP W-CDMA, Test Model 1 + 64 DPCH, 5 MHz offset
34 32 P1dB (dBm) 30 28 26
-40C +25C +85C
6 5 NF (dB) 4 3 2 1 0 2130 2150 2170 2110 2130 2150 2170 Frequency (MHz)
OIP3 vs. Temperature -40C +25C +85C
-35 -40 ACPR (dBc) -45 -50 -55 -60
freq = 2140 MHz
24 2110
-40 C
+25 C
+85 C
18
19
20
21
22
23
24
Frequency (MHz)
IMD products vs. Output Power -20 IMD products (dBm) -40 -60 IMD_Low -80 IMD_High
fundamental frequency = 2140, 2141 MHz; Temp = +25C
Output Channel Power (dBm)
OIP3 vs. Output Power 50 45 40 35 30
fundamental frequency = 2140, 2141 MHz; Temp = +25C
46 44 OIP3 (dBm) 42 40 38 36 -40 -15 10 35 60 85 Temperature ( C)
Output Power / Gain vs. Input Power 16 14 Gain (dB) Gain 24 20 Output Power 2 6 16 12 Input Power (dBm) 12 10 8 6
frequency = 2140 MHz, Temp = -40C
freq = 2140, 2141 MHz +15 dBm / tone
-100 0 4 8 12 16 Output Power (dBm) 20 24
OIP3 (dBm)
0
4
8 12 16 Output Power (dBm)
20
24
Output Power / Gain vs. Input Power 32 Output Power (dBm) 28
16 14
frequency = 2140 MHz, Temp = +25C
Output Power / Gain vs. Input Power 32 Output Power (dBm) 28
16 14
frequency = 2140 MHz, Temp = +85C
32 28 Output Power (dBm)
Gain (dB)
Gain (dB)
Gain 24 20 Output Power
10 14 18 Input Power (dBm ) 22
12 10 8 6
12 10 8
Gain
24 20 16
16 12
Output Power
6 2 6 10 14 18 Input Power (dBm ) 22
14 mil GETEKTM ML200DSS (r = 4.2) 18 6 The 10 layout of14 circuit can be 22 this downloaded from2 website. the
12
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 8 of 12 October 2006
FP2189
1-Watt HFET
Typical RF Performance Drain Bias = +8 V, Ids = 250 mA, 25 C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
Reference Design: 2400 - 2600 MHz
The application circuit is matched for output power.
S-Parameters
20
MHz dB dB dB dBm dBm
2400 12.9 -14.5 -7.9 +31.1 +45.0
2500 13.0 -26 -9.6 +31.2 +45.3
2600 12.6 -15 -11.4 +30.8 +47.0
10
DB(|S[1,1]|) DB(|S[2,1]|) DB(|S[2,2]|)
(dB)
0 -10 -20 -30 2.2 2.3 2.4 2.5 2.6 Frequency (GHz) 2.7 2.8
The 2.4 - 2.6 GHz Reference Circuit is shown for design purposes only. An evaluation board is not readily available for this application. The reader can obtain an FP2189-PCB2140S evaluation board and modify it with the circuit shown to achieve the performance shown in this reference design.
CAP ID=C3 C=33 pF
Vds=8V @ 250 mA CAP ID=C8 C=1e4 pF
-Vgg RES ID= R1 R=10 Ohm
CAP ID=C2 C=DNP pF
CAP ID=C6 C=22 pF CAP ID=C7 C=1000 pF TLIN ID= TL2 Z0=50 Ohm EL= 23.5 Deg F0=2400 MHz IND ID= L2 L= 18 nH CAP ID=C9 C=22 pF
IND ID=L1 L=5.6 nH PORT P=1 Z=50 Ohm CAP ID=C1 C=22 pF
TLIN ID=TL1 Z0=50 Ohm EL= 11.8 Deg F0=2400 MHz
SUBCKT ID=Q1 NET="FP2189" RES ID=R2 R=5.6 Ohm
1 2
PORT P= 2 Z= 50 Ohm
CAP ID=C4 C=DNP pF
CAP ID=C11 C=1.8 pF
CAP ID=C5 C=1.3 pF
Bill of Materials
Ref. Desig. C1, C6, C9 C3 C5 C11 C7 C8 L1 L2 R1 R2 Q1 C2, C4 Value 22 pF 33 pF 1.3 pF 1.8 pF 1000 pF 0.1 F 5.6 nH 18 nH 10 5.6 FP2189 Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Multilayer chip inductor Chip resistor Chip resistor WJ 1W HFET Do Not Place Size 0603 0805 0603 0603 0603 1206 0603 0603 0603 0603 SOT-89
14 mil GETEKTM ML200DSS (r = 4.2) The main microstrip line has a line impedance of 50 .
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 9 of 12 October 2006
FP2189
1-Watt HFET
Typical RF Performance Drain Bias = +8 V, Ids = 250 mA, 25 C
Frequency S21 - Gain S11 - Input Return Loss S22 - Output Return Loss Output P1dB Output IP3
(+15 dBm / tone, 1 MHz spacing)
The Communications Edge TM Product Information
Reference Design: 3400 - 3600 MHz
The application circuit is matched for output power.
S-Parameters
20
MHz dB dB dB dBm dBm
3400 12.6 -15 -7.6 +30.9 +43.8
3500 13.0 -28 -7.9 +30.9 +43.6
3600 12.9 -12 -9.1 +30.8 +43.8
10 (dB) 0 -10 -20 -30 3.2 3.3 3.4 3.5 3.6 Frequency (GHz) 3.7 3.8
DB(|S[1,1]|) DB(|S[2,1]|) DB(| S[2,2]|)
The 3.4 - 3.6 GHz Reference Circuit is shown for design purposes only. An evaluation board is not readily available for this application. The reader can obtain an FP2189-PCB2140S evaluation board and modify it with the circuit shown to achieve the performance shown in this reference design.
Vds=8V @ 250 mA -Vgg RES ID= R1 R= 20 Ohm CAP ID=C8 C=1e4 pF CAP ID=C6 C=1000 pF CAP ID=C7 C=22 pF IND ID=L1 L=5.6 nH SUBCKT ID=Q1 NET="FP2189" RES ID=R2 R=6.2 Ohm
1 2
CAP ID=C3 C=33 pF CAP ID= C2 C= DNP pF
PORT P=1 Z=50 Ohm
CAP ID= C1 C= 22 pF
IND ID= L3 L=2.7 nH
IND ID= L2 L=15 nH
PORT P=2 Z=50 Ohm
CAP ID=C10 C= 0.3 pF
CAP ID=C4 C=1 .1 pF
CAP ID=C5 C=0.7 pF
CAP ID= C9 C= 22 pF
Bill of Materials
Ref. Desig. C1, C7, C9 C3 C4 C5 C6 C8 C10 L1 L2 L3 R1 R2 Q1 C2 14 mil GETEKTM ML200DSS (r = 4.2) The main microstrip line has a line impedance of 50 .
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 10 of 12 October 2006
Value 22 pF 33 pF 1.1 pF 0.7 pF 1000 pF 0.1 F 0.3 pF 5.6 nH 15 nH 2.7 nH 20 6.2 FP2189
Part style Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Chip capacitor Multilayer chip inductor Multilayer chip inductor Multilayer chip inductor Chip resistor Chip resistor WJ 1W HFET Do Not Place
Size 0603 0805 0603 0603 0603 1206 0603 0603 0603 0603 0603 0603 SOT-89
FP2189
1-Watt HFET
Special attention should be taken to properly bias the FP2189. Power supply sequencing is required to prevent the device from operating at 100% Idss for a prolonged period of time and possibly causing damage to the device. It is recommended that for the safest operation, the negative supply be "first on and last off." With a negative gate voltage present, the drain voltage can then be applied to the device. The gate voltage can then be adjusted to have the device be used at the proper quiescent bias condition. An optional active-bias current mirror is recommended for use with the application circuits shown in this datasheet. Generally in a laboratory environment, the gate voltage is adjusted until the drain draws the recommended operating current. The gate voltage required can vary slightly from device to device because of device pinchoff variation, while also varying slightly over temperature. The active-bias circuit, shown on the right, uses dual PNP transistors to provide a constant drain current into the FP2189, while also eliminating the effects of pinchoff variation. This configuration is best suited for applications where the intended output power level of the amplifier is backed off at least 6 dB away from its compression point. With the implementation of the circuit, lower P1dB values may be measured for a Class-AB amplifier, where the device will attempt to source more drain current while the circuit tries to provide a constant drain current. The circuit should be connected directly in line with where the voltage supplies would be normally connected with the amplifier circuit, as shown the diagram. Any required matching circuitry remains the same, although it is not shown in the diagram. This recommended active-bias constant-current circuit adds 7 components to the parts count for implementation, but should cost only an extra $0.144 to realize ($0.10 for U1, $0.0029 for R1, R3, R4, R5, $0.024 for R2, and $0.0085 for C1). Temperature compensation is achieved by tracking the voltage variation with the temperature of the emitter-to-base junction of the two PNP transistors. As a 1st order approximation, this is achieved by using matched transistors with approximately the same Ibe current. Thus the transistor emitter voltage adjusts the HFET gate voltage so that the device draws a constant current, regardless of the temperature. A Rohm dual transistor - UMT1N - is recommended for cost, minimal board space requirements, and to minimize the variation between the two transistors. Minimizing the variability between the base-to-emitter junctions allow more accuracy in setting the current draw. More details can be found in a separate application note "Active-bias Constant-current Source Recommended for HFETs" found on the WJ website.
The Communications Edge TM Product Information
Application Note: Constant-Current Active-Biasing
+Vdd
R1
R2
U1
4 Rohm UMT1N 1 2 5
C1 .01 F
3
6
R4 1 k R3 R5 RF IN
M.N.
RF OUT
DUT
M.N.
-Vgg
HFET Application Circuit
Parameter Pos Supply, Vdd Neg Supply, Vgg Vds Ids R1 R2 R3 R4 R5
FP2189 +8 V -5 V +7.75 V 250 mA 62 1.0 1.8 k 1 k 1 k
*R2 should be of size 0805 to dissipate 0.0625 Watts. This should be of 1% tolerance. Two 2.0 resistors in parallel of size 0603 can also be used.
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 11 of 12 October 2006
FP2189
1-Watt HFET
The Communications Edge TM Product Information
FP2189-G Mechanical Information
This package is lead-free/Green/RoHS-compliant. It is compatible with both lead-free (maximum 260 C reflow temperature) and leaded (maximum 245 C reflow temperature) soldering processes. The plating material on the leads is NiPdAu.
Outline Drawing
Product Marking
The FP2189-G will be marked with an "FP21G" designator. An alphanumeric lot code ("XXXX-X") is also marked below the part designator on the top surface of the package. The obsolete tin-lead package is marked with an "FP2189" designator followed by an alphanumeric lot code. Tape and reel specifications for this part are located on the website in the "Application Notes" section.
MSL / ESD Rating Land Pattern
ESD Rating: Value: Test: Standard: ESD Rating: Value: Test: Standard: Class 1B Passes 500V to <1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 Class IV Passes at 2000 V min. Charged Device Model (CDM) JEDEC Standard JESD22-C101
MSL Rating: Level 3 at +260 C convection reflow Standard: JEDEC Standard J-STD-020
Mounting Config. Notes
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135") diameter drill and have a final plated thru diameter of .25 mm (.010"). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 5. RF trace width depends upon the PC board material and construction. 6. Use 1 oz. Copper minimum. 7. All dimensions are in millimeters (inches). Angles are in degrees.
Thermal Specifications
Parameter
Operating Case Temperature Thermal Resistance, Rth (1) Junction Temperature, Tj (2)
MTTF vs. GND Tab Temperature 100
-40 to +85 C 35 C/W 155 C
M T T F (m illio n h rs )
Rating
10
1. The thermal resistance is referenced from the hottest part of the junction to the ground tab (pin 4). 2. This corresponds to the typical drain biasing condition of +8V, 250 mA at an 85 C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 160 C.
1
0 60 70 80 90 100 110 Tab Temperature (C) 120
Specifications and information are subject to change without notice. WJ Communications, Inc * Phone 1-800-WJ1-4401 * FAX: 408-577-6621 * e-mail: sales@wj.com * Web site: www.wj.com Page 12 of 12 October 2006

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